Influence of carrier statistics on InGaN/GaN device performance

We investigated carrier statistics of highly efficient InGaN/GaN devices based on quantum dots. We demonstrate that delocalized carriers in both InGaN residual quantum well and GaN matrix are responsible for significant nonradiative recombination. In case of weak carrier localization in the quantum dots Boltzmann carrier distribution in the localized states is present. In case of high value of localization energy strong deviation from Boltzmann carrier statistics is observed at room temperature because of comparable probability of recombination process as and carrier capture to and their thermal escape from QD levels. Since the deep carrier localization and low population of delocalized carrier better temperature stability is observed in the latter case.