• DocumentCode
    1702564
  • Title

    Real time evolution of charge decay characteristics in silicon nanocrystals

  • Author

    Ng, C.Y. ; Chen, T.P. ; Lim, V.S.W. ; Tse, M.S.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2004
  • Abstract
    In this paper, we present a study on the charge trapping and charge decay mechanism in silicon nanocrystals (nc-Si) embedded in silicon-dioxide (SiO2) by electrostatic force microscopy (EFM). From the characteristic decay time τ, lateral diffusion of the stored charges in nc-Si is observed. Increases in the size of charge cloud as a function of time is an evidence of lateral charge diffusion. In addition, charge interaction between the charges with opposite charge sign is also evident from the oscillation in the time dependence of the size of charge cloud. Neighboring charge with opposite charge sign enhanced the lateral charge diffusion.
  • Keywords
    charge exchange; diffusion; electron microscopy; nanostructured materials; silicon compounds; SiO2; charge cloud; charge decay characteristics; charge decay mechanism; charge interaction; charge trapping; electrostatic force microscopy; lateral charge diffusion; silicon nanocrystals; time function; Capacitance-voltage characteristics; Clouds; Current measurement; Electron traps; Electrostatic measurements; Force measurement; Microelectronics; Nanocrystals; Silicon; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
  • Print_ISBN
    0-7803-8658-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2004.1620860
  • Filename
    1620860