DocumentCode
1702564
Title
Real time evolution of charge decay characteristics in silicon nanocrystals
Author
Ng, C.Y. ; Chen, T.P. ; Lim, V.S.W. ; Tse, M.S.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2004
Abstract
In this paper, we present a study on the charge trapping and charge decay mechanism in silicon nanocrystals (nc-Si) embedded in silicon-dioxide (SiO2) by electrostatic force microscopy (EFM). From the characteristic decay time τ, lateral diffusion of the stored charges in nc-Si is observed. Increases in the size of charge cloud as a function of time is an evidence of lateral charge diffusion. In addition, charge interaction between the charges with opposite charge sign is also evident from the oscillation in the time dependence of the size of charge cloud. Neighboring charge with opposite charge sign enhanced the lateral charge diffusion.
Keywords
charge exchange; diffusion; electron microscopy; nanostructured materials; silicon compounds; SiO2; charge cloud; charge decay characteristics; charge decay mechanism; charge interaction; charge trapping; electrostatic force microscopy; lateral charge diffusion; silicon nanocrystals; time function; Capacitance-voltage characteristics; Clouds; Current measurement; Electron traps; Electrostatic measurements; Force measurement; Microelectronics; Nanocrystals; Silicon; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN
0-7803-8658-2
Type
conf
DOI
10.1109/SMELEC.2004.1620860
Filename
1620860
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