2D Diffusion Models And Nonequilibrium Point Defects

Anomalous behaviour of dopants diffusion in silicon are known to be due to nonequilibrium point defects. In order to take into account their various effects (OED, ORD, Emitter Push Effect), the diffusion coefficients are written in an appropriate form and the local concentration of point defects are calculated from the continuity equation. Thus the coupled equations for the diffusion of dopants and point defects can be solved to provide a physical solution to the diffusion problem. The theoritical analysis is derived from a precise examination of the results of the OLIMP program, which solves the complete set of equations.