Differential transmission line structure for over 10 Gbps signal transmission at global interconnect in Si ULSI

Author

Ito, Hiroyuki ; Gomi, Shinichiro ; Sugita, Hideyuki ; Okada, Kenichi ; Masu, Kazuya

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2004

Firstpage

414

Lastpage

415

Abstract

The diagonal-pair line structure is proposed as a differential transmission line, which achieves high speed and low power signal transmission in Si ULSI. This paper investigates transmission characteristics of the diagonal-pair line with time-domain measurements and electromagnetic simulations. 3 Gbps signal propagation can be achieved by one-cm-long diagonal-pair line, which is fabricated by 0.35 μm CMOS process. Simulated results show that the proposed transmission line can transmit 30 Gbps signal.

Keywords

CMOS integrated circuits; ULSI; integrated circuit design; integrated circuit interconnections; time-domain analysis; transmission line theory; 10 Gbit/s; 30 Gbit/s; CMOS process; Si; ULSI; diagonal-pair line structure; differential transmission line structure; electromagnetic simulations; eye-diagrams; eye-pattern generation; global interconnect; high speed signal transmission; low power signal transmission; time-domain measurements; Attenuation; Crosstalk; Distributed parameter circuits; Electromagnetic propagation; Integrated circuit interconnections; Power transmission lines; Time domain analysis; Transmission line measurements; Transmission lines; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-8637-X

Type

conf

DOI

10.1109/APASIC.2004.1349516

Filename

1349516