Die design of a transmitting transistor in a 175 MHz power amplifier at 28V

Author

Rajah, Prakash ; Bin Ismail, Razali ; Rajah, Avinash

Author_Institution

Dept. of Electron., Univ. Teknologi Malaysia, Johor Bahru, Malaysia

fYear

2004

Abstract

This paper presents the die design of a NPN transistor, which is targeted for operation in a power amplifier. The proposed die is designed using epitaxial planar bipolar junction technology. The transistor die is designed for operation in the 175MHz frequency range with a 28V biasing. It is capable of producing a maximum output power of 4W. It can be utilized in Class A, Class B or Class C power amplifiers meant for transmission purposes such as in mobile communication, industrial communication or military transmitters. The power amplifier is typically placed before the antenna in transmitter systems. It is best to couple the design in a two-stage amplifier to produce a significantly higher-powered signal for transmission.

Keywords

VHF amplifiers; bipolar integrated circuits; integrated circuit design; power amplifiers; 175 MHz; 28 V; 4 W; Class A power amplifiers; Class B power amplifiers; Class C power amplifiers; NPN transistor; die design; epitaxial planar bipolar junction technology; two-stage amplifier; Communication industry; Defense industry; Frequency; Military communication; Mobile communication; Operational amplifiers; Power amplifiers; Power generation; Transmitters; Transmitting antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on

Print_ISBN

0-7803-8658-2

Type

conf

DOI

10.1109/SMELEC.2004.1620864

Filename

1620864