The extension of MINIMOS to a three dimensional simulation program

An accurate three-dimensional simulaton program for MOSFET devices has been developed by extending MINIMOS (vers. 4) in 31). The physical model is based on the ´hot-electron transport-model´, which includes the Poisson equation, the continuity equations and a selfconsistent set of equations for the currents, mobilities and carrier-temperatures. The standard finite difference discretization and the SOR (successive over relaxation) method are utilized to reduce computational time and memory requirements. Adaptive grid refinement is used to equidistribute the discretization errors. Three-dimensional effects like threshold shift for small channel devices, channel narrowing and the accumulation of carriers at the channel edge have been successfully modeled. Our analyses make clear that three-dimensional calculations are most important for accurate device modeling.