DocumentCode :
1702935
Title :
Microwave Performance Of Single-gate And Dual-gate Modfets Using Double Hetero´unction Modulation-doped Structures
Author :
Chen, Y.K. ; Wang, G.W. ; Radulescu, D.C. ; Lepore, A.N. ; Tasker, P.J. ; Eastman, L.F.
Author_Institution :
Cornell University
fYear :
1987
Firstpage :
45
Lastpage :
52
Keywords :
DH-HEMTs; Electron beams; Epitaxial layers; FETs; Frequency; Gallium arsenide; HEMTs; Heterojunctions; Lithography; MODFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Type :
conf
DOI :
10.1109/CORNEL.1987.721212
Filename :
721212
Link To Document :
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