DocumentCode
1702955
Title
Electrical properties of Ti/Ag contacts to n-type Al0.10Ga0.90N film grown on sapphire
Author
Othman, S. ; Yam, F.K. ; Hassan, Z.
Author_Institution
Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia
fYear
2004
Abstract
In this work, we report on the contact characteristics of Ti and Ag on unintentionally doped n-type Al0.10Ga0.90N film grown on sapphire substrate. Two different metallization schemes (bi-layer thin film); Ti/Ag and Ag/Ti were investigated. The effect of the additional application of annealing treatment at temperatures of 400 C and 800 C for 20 min in N2 ambient was reported. Changes in the surface morphology of the contacts on annealing were examined and compared by scanning electron microscopy (SEM) and energy dispersive X-ray spectrometer (EDS). Specific contact resistivity, determined using transmission line method (TLM) and current-voltage (I-V) measurements were calculated and compared.
Keywords
III-V semiconductors; X-ray spectrometers; aluminium compounds; annealing; electrical contacts; gallium compounds; sapphire; scanning electron microscopy; semiconductor thin films; silver alloys; titanium alloys; wide band gap semiconductors; 20 min; 400 C; 800 C; Al0.10Ga0.90N-Al2O3; Ti-Ag; Ti/Ag contacts; annealing treatment; bi-layer thin film; contact characteristics; contact resistivity; current-voltage measurements; electrical properties; energy dispersive X-ray spectrometer; metallization schemes; n-type film; sapphire; scanning electron microscopy; surface morphology; transmission line method; Annealing; Contacts; Dispersion; Metallization; Scanning electron microscopy; Substrates; Surface morphology; Surface treatment; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN
0-7803-8658-2
Type
conf
DOI
10.1109/SMELEC.2004.1620873
Filename
1620873
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