Title :
High Frequency Properties Of InA1As/InGaAs High Electron Mobility Transistors At 77 K
Author :
Kolodzey, J. ; Boor, S. ; Saunier, P. ; Lee, J.W. ; Tserng, H.Q.
Author_Institution :
University of Illinois
Keywords :
Cutoff frequency; Fixtures; Frequency measurement; Gain measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Scattering parameters; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
DOI :
10.1109/CORNEL.1987.721213
