• DocumentCode
    1702961
  • Title

    High Frequency Properties Of InA1As/InGaAs High Electron Mobility Transistors At 77 K

  • Author

    Kolodzey, J. ; Boor, S. ; Saunier, P. ; Lee, J.W. ; Tserng, H.Q.

  • Author_Institution
    University of Illinois
  • fYear
    1987
  • Firstpage
    53
  • Lastpage
    59
  • Keywords
    Cutoff frequency; Fixtures; Frequency measurement; Gain measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Scattering parameters; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721213
  • Filename
    721213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1702961