High mobility channel CMOS technologies for realizing high performance LSI´s

Author

Takagi, Shinichi

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2009

Firstpage

153

Lastpage

160

Abstract

Saturation of CMOS performance has been evident in the present 45/32 nm technology node, because of a variety of physical limitations on the miniaturization. Thus, channel engineering, including the enhancement of drive current due to high mobility channel materials and with robustness against short channel effects and characteristic variation due to multi-gate structures, has currently been recognized as mandatory for high performance CMOS. In this paper, we report our approaches to further improvement of MOSFETs by using strained-Si, SiGe, Ge and III-V semiconductor channels on the Si CMOS platform with an emphasis on the combination of ultra-thin body and multi-gate structures.

Keywords

CMOS integrated circuits; Ge-Si alloys; III-V semiconductors; MOSFET; large scale integration; nanotechnology; III-V semiconductor channels; LSI; MOSFET; SiGe; channel engineering; large scale integration; mobility channel CMOS technology; multigate structure; nanotechnology node; size 32 nm; size 45 nm; ultra-thin body; CMOS technology; Character recognition; Germanium silicon alloys; III-V semiconductor materials; MOSFETs; Robustness; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2009. CICC '09. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-4071-9

Electronic_ISBN

978-1-4244-4073-3

Type

conf

DOI

10.1109/CICC.2009.5280866

Filename

5280866