Title :
Improvements In Modfet Performance Realized Through ION Implantation In The Gate Region
Author :
Lam, C.S. ; Fonstad, C.G.
Author_Institution :
Massachusetts Institute of Technology
Keywords :
Contacts; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Ion implantation; MODFETs; Microwave devices; Rapid thermal annealing; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721217
