Title :
Enhance / Deplete GaAs SISFETs
Author :
Baratte, H. ; La Tulipe, D.C. ; Frank, D.J. ; Solomon, P.M. ; Jackson, T.N. ; Wright, S.L.
Author_Institution :
IBM T.J. Watson Research Center
Keywords :
Annealing; Circuits; FETs; Gallium arsenide; Heterojunctions; Implants; Insulation; Silicides; Threshold voltage; USA Councils;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
DOI :
10.1109/CORNEL.1987.721221
