• DocumentCode
    1703469
  • Title

    Microwave Operation Of Heterostructure Isolated-Gate FETs

  • Author

    Menk, G.E. ; Sadler, R.A. ; Balzan, M.L. ; Geissberger, A.E. ; Bah, I.J. ; Lee, H.

  • Author_Institution
    ITT Gallium Arsenide Technology Center
  • fYear
    1987
  • Firstpage
    135
  • Lastpage
    143
  • Keywords
    Electrodes; Gain measurement; Gallium arsenide; Gold; Metallization; Microwave FETs; Microwave devices; Noise figure; Noise measurement; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721222
  • Filename
    721222