Title :
A 56MΩ CMOS TIA for MEMS applications
Author :
Salvia, James ; Lajevardi, Pedram ; Hekmat, Mohammad ; Murmann, Boris
Author_Institution :
Electr. Eng. Dept., Stanford Univ., Stanford, CA, USA
Abstract :
We present the analysis, design, and measurement results of a high-gain, low-noise differential transimpedance amplifier (TIA) designed to interface with electrostatic microelectromechanical systems (MEMS) resonators. A capacitive-feedback current amplifier drives current into an active load to obtain a 56 MOmega transimpedance gain, 1.8 MHz bandwidth, phase response near 0deg, and 65 fA/radicHz input-referred noise. The TIA was fabricated in 0.18 mum CMOS technology and dissipates 436 muW from a 1.8 V supply.
Keywords :
CMOS integrated circuits; circuit feedback; differential amplifiers; electrostatic devices; integrated circuit noise; micromechanical resonators; CMOS TIA design; MEMS application; TIA fabrication; bandwidth 1.8 MHz; capacitive-feedback current amplifier; electrostatic microelectromechanical system resonator; low-noise differential transimpedance amplifier; power 436 muW; size 0.18 mum; voltage 1.8 V; Active noise reduction; Bandwidth; CMOS technology; Differential amplifiers; Electrostatic analysis; Electrostatic measurements; Low-noise amplifiers; Microelectromechanical systems; Micromechanical devices; Phase noise;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280878
