Title :
Low Noise 0.1-/spl mu/m GaAs MESFETs by MBE
Author :
Mishra, U.K. ; Beaubien, R.S. ; Delaney, M.J. ; Brown, A.S. ; Hackett, L.H.
Author_Institution :
Hughes Research Laboratories
Keywords :
Buffer layers; Degradation; Doping; FETs; Gallium arsenide; MESFETs; Neodymium; P-n junctions; Substrates; Transconductance;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721227
