• DocumentCode
    1703672
  • Title

    Formation Of Low Temperature Ohmic Contacts To GaAs MESFETs And GaAs/AlGaAs MODFETs

  • Author

    Cibuzar, G.

  • Author_Institution
    Unisys Corporation
  • fYear
    1987
  • Firstpage
    219
  • Lastpage
    228
  • Keywords
    Contact resistance; Gallium arsenide; Gold; HEMTs; MESFETs; MODFETs; Ohmic contacts; Rapid thermal annealing; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY, USA
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721231
  • Filename
    721231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703672