Title :
Formation Of Low Temperature Ohmic Contacts To GaAs MESFETs And GaAs/AlGaAs MODFETs
Author_Institution :
Unisys Corporation
Keywords :
Contact resistance; Gallium arsenide; Gold; HEMTs; MESFETs; MODFETs; Ohmic contacts; Rapid thermal annealing; Silicon; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721231
