Title :
Advanced Device Fabrication With Angled Chlorine Ion Beam Assisted Etching
Author :
Goodhue, W.D. ; Pang, S.W. ; Hollis, M.A. ; Donnelly, J.P.
Author_Institution :
Massachusetts Institute of Technology
Keywords :
Argon; Etching; FETs; Fabrication; Gallium arsenide; Ion beams; Optical arrays; Resists; Semiconductor laser arrays; Vertical cavity surface emitting lasers;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721233
