• DocumentCode
    1703797
  • Title

    AlGaAs/GaAs Heterojunction Bipolar Transistors For Power Applications

  • Author

    Bayraktaroglu, B. ; Camilleri, N. ; Tserng, H.Q.

  • Author_Institution
    Texas Instruments Incorporated
  • fYear
    1987
  • Firstpage
    265
  • Lastpage
    273
  • Keywords
    Doping; FETs; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Microwave devices; Millimeter wave transistors; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY, USA
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721236
  • Filename
    721236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703797