• DocumentCode
    1703810
  • Title

    Electrical characteristics of Al0.22Ga0.78As/In0.22Ga0.78As PHEMT with gate length in nano regime

  • Author

    Kharuddin, K. N Mohd ; Majlis, B. Yeop

  • Author_Institution
    Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Selangor, Malaysia
  • fYear
    2004
  • Abstract
    We investigated the gate length (Lg) dependence of the electrical characteristics in AlGaAs/InGaAs PHEMT using Silvaco simulation tools. Two PHEMTs with different structure are studied, namely uniformly doped PHEMT (U-HEMT) and PHEMT with double delta-doped (D-HEMT) layers. For both PHEMT, short channel effects affect characteristics significantly especially in devices with gate lengths of sub-100 nm regime. From simulation, a maximum fT of 165 GHz is obtained for 70 nm gate-length U-HEMT while the 70 nm gate-length D-PHEMT displays fT of 135 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; nanoelectronics; semiconductor device models; semiconductor doping; 135 GHz; 165 GHz; 70 nm; Al0.22Ga0.78As-In0.22Ga0.78As; AlGaAs-InGaAs; D-HEMT devices; PHEMT devices; Silvaco simulation tools; U-HEMT devices; double delta-doped layers; electrical characteristics; gate length; short channel effects; uniform doping; Doping; Electric variables; Electrons; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; PHEMTs; Radio frequency; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
  • Print_ISBN
    0-7803-8658-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2004.1620905
  • Filename
    1620905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703810