Title :
A Self-Aligned AlGaAs/GaAs Heterostructure Bipolar Transistor With Non Alloyed Graded-Gap Ohmic Contacts To The Base And Emitter
Author :
Rao, M.A. ; Long, S.I. ; Kroemer, H.
Author_Institution :
University of California
Keywords :
Alloying; Bipolar transistors; Conductivity measurement; Gallium arsenide; Heterojunction bipolar transistors; Lead; Metallization; Molecular beam epitaxial growth; Substrates; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721237
