• DocumentCode
    1703839
  • Title

    A Study Of GaAs Inversion-Base Bipolar Transistor

  • Author

    Huang, C.I. ; Cheney, M.E. ; Paulus, M.J. ; Scheihing, J.E. ; Crist, J.O. ; Sopko, M.E. ; Bozada, C.A. ; Stutz, C.E. ; Jones, R.L. ; Evans, K.R.

  • Author_Institution
    Wright-Aeronautical Laboratories
  • fYear
    1987
  • Firstpage
    293
  • Lastpage
    298
  • Keywords
    Bipolar transistors; Breakdown voltage; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Leakage current; Performance gain; Shape; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY, USA
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721239
  • Filename
    721239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703839