DocumentCode
1703868
Title
RF-CMOS-MEMS based frequency-reconfigurable amplifiers
Author
Mukherjee, Tamal ; Fedder, Gary K.
Author_Institution
Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2009
Firstpage
81
Lastpage
84
Abstract
Chips from a foundry RF process are post-processed to release MEMS passive devices and enable single-chip reconfigurable circuits. A MEMS variable capacitor, capable of 7:1 tuning ratio, reconfigures a narrow-band low-noise amplifier and a power amplifier over a 1 GHz frequency range. A suspended MEMS inductor, with > 50% improvement in Q, lowers amplifier power consumption.
Keywords
CMOS analogue integrated circuits; low noise amplifiers; micromechanical devices; power amplifiers; radiofrequency amplifiers; MEMS inductor; MEMS passive devices; MEMS variable capacitor; RF-CMOS-MEMS; foundry RF process; frequency-reconfigurable amplifiers; low-noise amplifier; power amplifier; single-chip reconfigurable circuits; Capacitors; Circuit optimization; Foundries; Inductors; Low-noise amplifiers; Micromechanical devices; Narrowband; Radio frequency; Radiofrequency amplifiers; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-4071-9
Electronic_ISBN
978-1-4244-4073-3
Type
conf
DOI
10.1109/CICC.2009.5280891
Filename
5280891
Link To Document