High Power-Added Efficiency Measured At 1.3 And 20 Ghz Using a GaAs Permeable Base Transistor*

Author

Nichols, K.B. ; Hollis, Mark A. ; Bozler, C.O. ; Quddus, M.A. ; Mathews, R. ; Vera, Alonzo ; Rabe, Steffen ; Murphy, R.A.

Author_Institution

Massachusetts Institute of Technology

fYear

1987

Firstpage

307

Lastpage

315

Keywords

FETs; Frequency; Gain; Gallium arsenide; Gratings; HEMTs; Heterojunction bipolar transistors; Permeability measurement; Power measurement; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Type

DOI

10.1109/CORNEL.1987.721241

Filename

721241

Link To Document