Title :
Synthesis of silicon nanowires
Author :
Yee, Wong Yuen ; Yahaya, Muhammad ; Salleh, Muhamad Mat ; Majlis, Burhanuddin Yeop
Author_Institution :
Inst. of Microengineering & Nanoelectronics, UKM, Selangor, Malaysia
Abstract :
The synthesis of silicon nanowires is described in this paper. Using self-assembly approach, nanowires were grown by annealing of gold-coated silicon substrate to temperature about 1000 C in nitrogen ambient. Si nanowires formed upon cooling of the melted Au-Si alloy by the N2 gas. The diameter of the nanowires range from 50 to 150 nm and their length more than tens of microns.
Keywords :
annealing; cooling; elemental semiconductors; gold; nanowires; self-assembly; silicon; 50 to 150 nm; Au-Si; annealing process; cooling process; gold-coated silicon substrate; self-assembly process; silicon nanowire synthesis; Annealing; Magnetic materials; Nanoelectronics; Nanowires; Nitrogen; Scanning electron microscopy; Self-assembly; Silicon; Substrates; Temperature;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620909
