Title :
Convex-corner undercutting on corrugated diaphragm
Author :
Soin, Norhayati ; Majlis, Burhanuddin Yeop
Author_Institution :
Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Selangor, Malaysia
Abstract :
KOH process simulation etching of corrugated diaphragm with bossed structure on silicon (100) is presented with emphasis on convex corner behavior. The influence of the KOH etching temperature and concentration on the convex corner undercutting of corrugated diaphragm are observed. The convex corner behavior is analyzed based on the geometrical parameters and the new emergent high index silicon planes. It was found that the convex corner undercutting phenomena is significantly reduced at low etching temperature and high KOH concentration respectively.
Keywords :
diaphragms; elemental semiconductors; etching; micromechanical devices; semiconductor process modelling; silicon; KOH etching temperature; KOH process simulation etching; bossed structures; convex corner undercutting; corrugated diaphragm; Analytical models; Anisotropic magnetoresistance; Etching; Microelectromechanical devices; Microelectromechanical systems; Micromechanical devices; Nanoelectronics; Silicon; Temperature sensors; Virtual manufacturing;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620912
