DocumentCode
1704023
Title
Convex-corner undercutting on corrugated diaphragm
Author
Soin, Norhayati ; Majlis, Burhanuddin Yeop
Author_Institution
Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Selangor, Malaysia
fYear
2004
Abstract
KOH process simulation etching of corrugated diaphragm with bossed structure on silicon (100) is presented with emphasis on convex corner behavior. The influence of the KOH etching temperature and concentration on the convex corner undercutting of corrugated diaphragm are observed. The convex corner behavior is analyzed based on the geometrical parameters and the new emergent high index silicon planes. It was found that the convex corner undercutting phenomena is significantly reduced at low etching temperature and high KOH concentration respectively.
Keywords
diaphragms; elemental semiconductors; etching; micromechanical devices; semiconductor process modelling; silicon; KOH etching temperature; KOH process simulation etching; bossed structures; convex corner undercutting; corrugated diaphragm; Analytical models; Anisotropic magnetoresistance; Etching; Microelectromechanical devices; Microelectromechanical systems; Micromechanical devices; Nanoelectronics; Silicon; Temperature sensors; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN
0-7803-8658-2
Type
conf
DOI
10.1109/SMELEC.2004.1620912
Filename
1620912
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