Title :
Simulation study of I-V characteristics of RTD with variation in Doping concentration
Author :
Singh, Man Mohan ; Siddiqui, M.J. ; Khan, Aboo Bakar ; Thaseena, C.K.
Author_Institution :
Dept. of Electron. Eng., AMU, Aligarh, India
Abstract :
In this paper we present the effect on I-V characteristics of GaAs/AlGaAs Resonant Tunneling Diode (RTD) as a function of doping concentration. This simulation study may be utilized to improve the performance of RTD at high frequencies. Furthermore, these characteristics provide a comparative relation with other parameters like barrier length and spacer layer. Simulation performed using Nextnano3 and Atlas tools confirm the various characteristics presented in this work.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling diodes; semiconductor doping; GaAs-AlGaAs; I-V characteristics; RTD; barrier length; doping concentration; resonant tunneling diode; spacer layer; IEEE Xplore; Portable document format; Device Simulation; Doping concentration; NEGF; Quantum Mechanics; RTD;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2013 International Conference on
Conference_Location :
Aligarh
Print_ISBN :
978-1-4799-1202-5
DOI :
10.1109/MSPCT.2013.6782131
