• DocumentCode
    1704184
  • Title

    Comparison study of uniformly-doped and delta-doped Al0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs

  • Author

    Kharuddin, K. N Mohd ; Majlis, B. Yeop

  • Author_Institution
    Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Selangor, Malaysia
  • fYear
    2004
  • Abstract
    Device performance of uniformly-doped and delta-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors are investigated with 2D numerical simulator, ATLAS/Silvaco. Simulation results demonstrates superior performance for the delta-doped structure. The advantages shown by delta-doped structure include better electron confinement and reduced parasitic conduction which are manifested as higher transconductance and improved drain current.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor doping; ATLAS-Silvaco numerical simulator; Al0.22Ga0.78As-In0.22Ga0.78As; AlGaAs-InGaAs; delta-doped structure; electron confinement; parasitic conduction; pseudomorphic HEMT; uniformly-doped structure; Carrier confinement; Charge carriers; Doping; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; Nanoelectronics; PHEMTs; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
  • Print_ISBN
    0-7803-8658-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2004.1620917
  • Filename
    1620917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1704184