• DocumentCode
    1704194
  • Title

    The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution

  • Author

    Guan, Lee Hock ; Jusoh, Mohd Sazli ; Dolah, Asban ; Yusof, Ashaari ; Yahya, Mohamed Razman ; Majlis, Burhanuddin Yeop

  • Author_Institution
    Microelectron. Unit, Telekom R&D Sdn. Bhd., Selangor, Malaysia
  • fYear
    2004
  • Abstract
    The etching selectivity of AlGaAs and InGaAs was studied and analyzed. Different chemical solutions and compositions were varied to study the etch rate effect between these two materials. The etching rates and selectivity of the H3PO4:H2O2:H2O, H2SO4:H2O2:H2O and C6H8O7:H2O2 is compared. The results show that the C6H8O7:H2O2 chemical solution exhibits higher etch rate and significant selectivity in comparison with H3PO4:H2O2:H2O, H2SO4:H2O2:H2O.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; organic compounds; AlGaAs; C6H8O7:H2O2 acid; H2O; H2O2; H2SO4:H2O2:H2O acid; H3PO4:H2O2:H2O acid; InGaAs; acid based etching solution; chemical compositions; chemical solutions; etch rate effect; etching selectivity; Chemicals; Gallium arsenide; Indium gallium arsenide; Oxidation; Resists; Semiconductor device manufacture; Semiconductor devices; Semiconductor materials; Temperature sensors; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
  • Print_ISBN
    0-7803-8658-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2004.1620918
  • Filename
    1620918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1704194