Title :
Copper interconnect technology for the 32 nm node and beyond
Author :
Gambino, Jeff ; Chen, Fen ; He, John
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
Copper interconnects have gained wide acceptance in the microelectronics industry due to improved resistivity and reliability compared to Al interconnects. However, there are many challenges with implementation of Cu interconnects at the 32 nm node and beyond, including increased resistivity, integration with porous low-k materials, and reliability. In addition, for RF and mixed signal technology, integration of passive devices is required. In this paper, each of these topics is addressed.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; mixed analogue-digital integrated circuits; passive networks; Cu; RF technology; copper interconnect technology; electromigration; microelectronics industry; mixed signal technology; package reliability; passive device integration; porous low-k materials; resistivity; size 32 nm; Conductivity; Copper; Materials reliability; Metals industry; Microelectronics; RF signals; Radio frequency;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280904
