Modeling the overshooting effect in the submicron CMOS inverters

The modeling of gate delays has always been one of the most difficult and market-sensitive works. In submicron designs, the second-order effects such as the input-to-output coupling capacitance have a significant influence on gate delay as shown in this paper. However, the accurate analysis of. the input-to-output coupling, capacitance effect has not been presented in previous research. In this paper, an analytical model for the influence of input-to-output coupling capacitance on CMOS inverter delay is proposed, in which a novel algorithm for computing overshooting time is given. Experimental results show good agreement with SPICE simulations.