Title :
Design of GaAs-based pseudomorphic HEMTs by 2D device simulations
Author :
Rahim, Ahmad Ismat Abdul ; Muhammad, Norman Fadhil Idham ; Sanusi, Rasidah ; Yahya, Mohamed Razman
Author_Institution :
Microelectron. Unit, Telekom R&D, Selangor, Malaysia
Abstract :
In this paper, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMT´s) was optimized by means of 2D device simulation. The commercial 2D device simulator Taurus-MEDICI is used to study the effect of varying barrier or supply doping concentration, NDsupply on the gate characteristics and current-gain cutoff frequency (fT) of the PHEMT. We show that values of fT in excess of 100GHz can be obtained by optimizing the supply doping concentration.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor doping; 2D device simulation; AlGaAs-InGaAs-GaAs; Taurus-MEDICI device simulator; pseudomorphic HEMT; pseudomorphic high electron mobility transistors; supply doping concentration; Capacitance; Character generation; Cost function; Cutoff frequency; Doping; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620930
