DocumentCode :
1704683
Title :
Photothermal study of ceramic ZnO doped with MnO
Author :
Zakaria, Azmi ; Rizwan, Zahid ; Halim, S.A.
Author_Institution :
Dept. of Phys., Univ. Putra Malaysia, Selangor, Malaysia
fYear :
2004
Abstract :
The band-gap energy (Eg) of ZnO doped with 0.1 to 2.0 mol % MnO and sintered at various isothermal sintering temperature is studied by photopyroelectric spectroscopy (PPES). The incident light was modulated at a frequency of 9Hz and was scanned in the wavelength range of 300 nm to 800 nm. Eg is estimated from the plot (phv)2 vs hv and is about 3.0 eV for the samples sintered at 850 C at all doping levels. Samples sintered at higher temperatures, the value of Eg decreases with the MnO mol % and beyond 1mol % Eg becomes constant at about 2.0 eV. The maximum value of nonlinear coefficient (α) of I-V characteristics is low for the samples sintered at 850 C at all doping levels. For the samples sintered at higher temperatures a decreases from the high initial values with the increase of MnO mol %; beyond 1 mol % it becomes constant. The X-ray diffractrometry shows that the crystal structure of ZnO doped with different mol % of MnO at all sintering temperatures remains to be of hexagonal type but a small peak is found related to the new phase ZnMn2O4 only at 1050 C sintering temperature at 2 mol % of MnO doping level. The density is decreased from 95.5% to 87% with the increase of sintering temperature and doping level.
Keywords :
II-VI semiconductors; X-ray diffractometers; ceramics; crystal structure; energy gap; manganese compounds; photothermal spectroscopy; semiconductor doping; sintering; zinc compounds; 300 to 800 nm; 850 C; 9 Hz; X-ray diffractrometry; ZnMn2O4; ZnO:MnO; band-gap energy; crystal structure; incident light modulation; isothermal sintering temperature; photopyroelectric spectroscopy; photothermal spectroscopy; Ceramics; Doping; Frequency modulation; Isothermal processes; Optical modulation; Photonic band gap; Spectroscopy; Temperature; X-ray diffraction; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
Type :
conf
DOI :
10.1109/SMELEC.2004.1620936
Filename :
1620936
Link To Document :
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