Investigation of performance optimized power trench MOSFETs With Double-Epilayer

Double-Epilayer structure were studied for n-channel low-voltage power trench MOSFET,The total specific on-resistance (Rds,on) of U-MOSFET can be reduced by optimizing the Double-Epilayer structure, Let´s elect better intrinsic epitaxial layer thickness and optimizing it, The optimization structure of Double-Epilayer exhibits a 14.9% reduction in the ON-resistance while maintaining essentially the same blocking voltage as the tranditional trench power MOSFET and improving the switching characteristics by reducing the quantity of Cgd Rds,on.