DocumentCode
1704788
Title
Experimental demonstration of a fully digital capacitive sensor interface built entirely using carbon-nanotube FETs
Author
Shulaker, Max ; Van Rethy, J. ; Hills, Gage ; Chen, Huanting ; Gielen, G. ; Wong, H.-S. Philip ; Mitra, Subhasish
Author_Institution
Stanford Univ., Stanford, CA, USA
fYear
2013
Firstpage
112
Lastpage
113
Abstract
This paper presents a complete sensor interface implemented entirely using CNFETs that can be fabricated reproducibly in a VLSI-compatible fashion. This is made possible by using the imperfection-immune paradigm [4], which successfully overcomes major obstacles for CNFET-based circuits: mis-positioned and metallic carbon nanotubes (CNTs). 44 CNFETs, each consisting of 10 to 200 CNTs depending on transistor sizing, are used to build the circuit. In contrast, earlier demonstrations of CNFET-based circuits included only small stand-alone components such as an adder sum, latch, percolation transport-based decoder, and ring oscillator on a single CNT [4]. Because it is easier to implement digital circuits using immature technologies compared to analog circuits, highly-digital sensor interfaces such as the PLL-based design in [5] are ideal implementations when using a new technology. The implemented capacitive sensor interface is based on a first-order Bang-Bang Phase-Locked Loop (BBPLL) digital architecture, which processes the sensor information entirely in the frequency domain (Fig. 6.8.1). Its funcationality is described in detail in [5].
Keywords
capacitive sensors; carbon nanotube field effect transistors; digital phase locked loops; BBPLL digital architecture; CNFET-based circuits; PLL-based design; VLSI; adder sum; analog circuits; carbon-nanotube FET; first-order bang-bang phase-locked loop; frequency domain analysis; fully digital capacitive sensor interface; imperfection-immune paradigm; latch; metallic carbon nanotubes; percolation transport-based decoder; ring oscillator; small stand-alone components; transistor sizing; CNTFETs; Capacitance; Capacitive sensors; Frequency measurement; Ring oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4673-4515-6
Type
conf
DOI
10.1109/ISSCC.2013.6487660
Filename
6487660
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