• DocumentCode
    1704788
  • Title

    Experimental demonstration of a fully digital capacitive sensor interface built entirely using carbon-nanotube FETs

  • Author

    Shulaker, Max ; Van Rethy, J. ; Hills, Gage ; Chen, Huanting ; Gielen, G. ; Wong, H.-S. Philip ; Mitra, Subhasish

  • Author_Institution
    Stanford Univ., Stanford, CA, USA
  • fYear
    2013
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    This paper presents a complete sensor interface implemented entirely using CNFETs that can be fabricated reproducibly in a VLSI-compatible fashion. This is made possible by using the imperfection-immune paradigm [4], which successfully overcomes major obstacles for CNFET-based circuits: mis-positioned and metallic carbon nanotubes (CNTs). 44 CNFETs, each consisting of 10 to 200 CNTs depending on transistor sizing, are used to build the circuit. In contrast, earlier demonstrations of CNFET-based circuits included only small stand-alone components such as an adder sum, latch, percolation transport-based decoder, and ring oscillator on a single CNT [4]. Because it is easier to implement digital circuits using immature technologies compared to analog circuits, highly-digital sensor interfaces such as the PLL-based design in [5] are ideal implementations when using a new technology. The implemented capacitive sensor interface is based on a first-order Bang-Bang Phase-Locked Loop (BBPLL) digital architecture, which processes the sensor information entirely in the frequency domain (Fig. 6.8.1). Its funcationality is described in detail in [5].
  • Keywords
    capacitive sensors; carbon nanotube field effect transistors; digital phase locked loops; BBPLL digital architecture; CNFET-based circuits; PLL-based design; VLSI; adder sum; analog circuits; carbon-nanotube FET; first-order bang-bang phase-locked loop; frequency domain analysis; fully digital capacitive sensor interface; imperfection-immune paradigm; latch; metallic carbon nanotubes; percolation transport-based decoder; ring oscillator; small stand-alone components; transistor sizing; CNTFETs; Capacitance; Capacitive sensors; Frequency measurement; Ring oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4673-4515-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2013.6487660
  • Filename
    6487660