Title :
Ion sensing improvements of hafnium oxide by nitrogen incorporation
Author :
Lai, Chao-Sung ; Yang, Chia-Ming ; Lue, Cheng-En ; Cheng-En Lue ; Wang, Chih-Yao ; Ko, H.P. ; Wang, Tzu-Ming
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
This is the first time that hafnium oxynitride (HfOxNy) have been applied to hydrogen ion sensing technology. HfOxNy and HfO2 were prepared in different ratio Ar/N2/O2 gas mixture by sputter with hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfOxNy-EIS was sputtering in the ambient of N2 ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.
Keywords :
gas mixtures; hafnium compounds; ion sensitive field effect transistors; nitrogen; sputtering; 1.7 mV; 12 hours; CMOS process; HfO2; HfOxNy; gas mixture; hydrogen ion sensing technology; ion sensing improvement; membrane thermal stability; water immersion; Argon; Biomembranes; Capacitance-voltage characteristics; Dielectric materials; Hafnium oxide; Hydrogen; Hysteresis; Nitrogen; Sputtering; Surface fitting;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620950
