Optimization of Optical and Electrical Behavior of Quantum Well GaN-Based LED

The performance of GaN/AlGaN quantum well was simulated using ATLAS software (Silvaco International Inc.). In this work, we simulated a quantum well active region of GaN with AlGaN cladding layers. Here, we studied the changes in radiative efficiency with the thickness of the active layer from 3 nm to 90 nm and found that the radiative efficiency increases when the thickness of the active layer was increased. We also found that the relative positions of the conduction band for GaN and n-type AlGaN vary beyond our expectation when the thickness of the active region is over 75 nm