Title :
Comparative study of buried insulator materials in LDMOSFETs
Author :
Moghadam, Hamid Amini ; Orouji, Ali A. ; Dideban, A.
Author_Institution :
Electr. Eng. Dept., Semnan Univ., Semnan, Iran
Abstract :
In this paper we study the influence of buried insulating materials including SiO2, Si3N4, and AlN in the breakdown voltage. An inversion layer forms under insulating layer that prevent from the electric field spreading into the substrate and therefore the breakdown voltage of device decreases. The inversion layer is stronger at materials with high dielectric constants and hence the breakdown voltage significantly decreases.
Keywords :
permittivity; power MOSFET; semiconductor device breakdown; AlN; LDMOSFET; Si3N4; SiO2; breakdown voltage; buried insulator material; dielectric constant; electric field; inversion layer; Breakdown voltage; Dielectric constant; Electric fields; Insulators; Silicon on insulator technology; Substrates;
Conference_Titel :
Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on
Conference_Location :
Listvyanka
Print_ISBN :
978-1-4244-7625-1
DOI :
10.1109/SIBIRCON.2010.5555119
