Optimized the breakdown voltage and specific on-resistance of double RESURF TMOS

Author

Chen, Wanjun ; Zhang, Bo ; Li, Zhaoji ; Xiang, Junli

Author_Institution

Center of IC Design, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

2

fYear

2005

Lastpage

1394

Abstract

In this paper, a novel TMOS with very deep trench double RESURF structure to achieve ultra-low specific on resistance is proposed and optimized. The proposed structure has a deep P column (up to the N⁺ drain) under the trench gate electrode. The effects of the depth of P column, widths and doping concentrations of both N column and P column are studied by analysis and simulation. According to our analysis and optimization, we have developed a 200 V class low on resistance TMOS with R_on,sp=172 mΩ.mm² at V_GS=10 V, which shows a reduction in the specific on resistance by 70% compared with the conventional TMOS.

Keywords

doping profiles; optimisation; power MOSFET; semiconductor device breakdown; 10 V; 200 V; breakdown voltage optimization; column width effects; deep trench structure; doping concentrations; double RESURF TMOS; sub-trench gate electrode deep P column; trench gate MOSFET; ultra-low specific on resistance; Design optimization; Doping; Electric resistance; Electrodes; Filling; Low voltage; MOSFET circuits; Power MOSFET; Power semiconductor devices; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2005. Proceedings. 2005 International Conference on

Print_ISBN

0-7803-9015-6

Type

conf

DOI

10.1109/ICCCAS.2005.1495365

Filename

1495365