On wafer noise measurement using bipolar transistor RF test structures

Author

Connor, S.D.

Author_Institution

Bipolar Characterization Group, GEC Plessey Semicond., Oldham, UK

fYear

1997

Firstpage

43

Lastpage

48

Abstract

We present here a technique for on wafer noise measurements using bipolar R.F. cell structures. Measurements were taken using both single and multiple device placements on a variety of technologies. At mid band, identification of individual noise sources within the device allows us to extract a base spreading resistance parameter. This noise extracted value for rb is compared to data from `S´ parameter measurement and our noise measurements are tested against simulated mid-band noise profiles

Keywords

S-parameters; bipolar integrated circuits; bipolar transistors; electric noise measurement; integrated circuit measurement; integrated circuit testing; RF cell structures; RF test structures; S parameter measurement; base spreading resistance parameter; bipolar transistor test structures; mid-band noise profiles; multiple device placements; wafer noise measurement; Bipolar transistors; Electrical resistance measurement; Noise figure; Noise generators; Noise measurement; Radio frequency; Semiconductor device noise; Signal to noise ratio; Testing; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-3243-1

Type

conf

DOI

10.1109/ICMTS.1997.589329

Filename

589329