Title :
A 71dB-SNDR 50MS/s 4.2mW CMOS SAR ADC by SNR enhancement techniques utilizing noise
Author :
Morie, Takashi ; Miki, T. ; Matsukawa, K. ; Bando, Yoshiaki ; Okumoto, T. ; Obata, Koji ; Sakiyama, S. ; Dosho, S.
Author_Institution :
Panasonic, Moriguchi, Japan
Abstract :
SAR-ADC power efficiency has improved due to its digitally oriented nature that utilizes the high switching speed of nanometer CMOS processes. In recent reports, time-interleaving techniques and multi-bit-per-cycle conversion have boosted speed to the GHz sampling range at low power consumption. However, to achieve SNR of >70dB at moderate sampling speed, SARs still need a lot of power, namely tens of mW [1-2]. In [1], a very high SNR of 90dB is achieved by a stage to amplify residue charge, which is one of the reasons for the 105mW power consumption at 12.5MS/s. In [2], 8× oversampling and a static current pre-amplifier for the comparator improve SNR to 88dB, but the ADC still consumes 66mW. In [3], digital calibration achieves an SNDR of 71dB at 3mW, but double conversion limits the sampling speed to 22.5MS/s.This paper describes a SAR ADC with 71dB SNDR that runs at 50MS/s and consumes 4.2mW. The ADC uses 3 SNDR-enhancement techniques that utilize noise and that have good compatibility to low-voltage fine digital processes.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; preamplifiers; synthetic aperture radar; ADC; CMOS SAR ADC; GHz sampling range; SAR-ADC power efficiency; SNDR-enhancement technique; SNR enhancement techniques; comparator; digital calibration; high-switching speed; low-power consumption; low-voltage fine-digital process; multibit-per-cycle conversion; nanometer CMOS processes; power 105 mW; power 3 mW; power 4.2 mW; power 66 mW; residue charge amplification; sampling speed; static current pre-amplifier; time-interleaving technique; Bandwidth; CMOS integrated circuits; CMOS technology; Capacitance; Power demand; Signal to noise ratio;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487731