DocumentCode :
17070
Title :
Design and Implementation of a Highly Efficient Three-Level T-Type Converter for Low-Voltage Applications
Author :
Schweizer, Mario ; Kolar, Johann W.
Author_Institution :
Power Electron. Syst. Lab., Swiss Fed. Inst. of Technol. Zurich, Zurich, Switzerland
Volume :
28
Issue :
2
fYear :
2013
fDate :
Feb. 2013
Firstpage :
899
Lastpage :
907
Abstract :
The demand for lightweight converters with high control performance and low acoustic noise led to an increase in switching frequencies of hard switched two-level low-voltage 3-phase converters over the last years. For high switching frequencies, converter efficiency suffers and can be kept high only by employing cost intensive switch technology such as SiC diodes or CoolMOS switches; therefore, conventional IGBT technology still prevails. In this paper, the alternative of using three-level converters for low-voltage applications is addressed. The performance and the competitiveness of the three-level T-type converter (3LT2C) is analyzed in detail and underlined with a hardware prototype. The 3LT2 C basically combines the positive aspects of the two-level converter such as low conduction losses, small part count and a simple operation principle with the advantages of the three-level converter such as low switching losses and superior output voltage quality. It is, therefore, considered to be a real alternative to two-level converters for certain low-voltage applications.
Keywords :
insulated gate bipolar transistors; switching convertors; 3LT2C converter; IGBT technology; coolMOS switches; cost intensive switch technology; hard switched two-level low-voltage three-phase converters; lightweight converters; low acoustic noise; low conduction losses; low switching losses; switching frequency; three-level T-type converter; two-level converter; voltage quality; Insulated gate bipolar transistors; Logic gates; Modulation; Switches; Switching loss; Temperature measurement; Topology; High efficiency; T-type converter; three-level converter;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2012.2203151
Filename :
6213134
Link To Document :
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