Flicker noise characterization of polysilicon resistors in submicron BiCMOS technologies

Author

Dit Buisson, O. Roux ; Morin, G.

Author_Institution

SGS-Thomson Microelectron., Crolles, France

fYear

1997

Firstpage

49

Lastpage

51

Abstract

Low frequency noise characterization of various polysilicon film resistors from two industrial BiCMOS 0.7 μm and BiCMOS 0.5 μm technologies, is performed on a test structure initially designed for resistor matching characterization, including a wide range of resistor area. After presentation of noise test bench results and related modeling, flicker noise properties are discussed for different polysilicon film thicknesses and doping levels. In conclusion, polysilicon resistance flicker noise depends strongly on these parameters

Keywords

BiCMOS integrated circuits; electric noise measurement; elemental semiconductors; flicker noise; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; integrated circuit testing; resistors; silicon; 0.5 micron; 0.7 micron; LF noise characterization; Si; doping levels; film resistors; flicker noise characterization; flicker noise properties; low frequency noise; polysilicon film thicknesses; polysilicon resistors; submicron BiCMOS technologies; test structure; 1f noise; BiCMOS integrated circuits; Circuit noise; Doping; Noise figure; Noise level; Performance evaluation; Resistors; Semiconductor device noise; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-3243-1

Type

conf

DOI

10.1109/ICMTS.1997.589331

Filename

589331