Title :
Flicker noise characterization of polysilicon resistors in submicron BiCMOS technologies
Author :
Dit Buisson, O. Roux ; Morin, G.
Author_Institution :
SGS-Thomson Microelectron., Crolles, France
Abstract :
Low frequency noise characterization of various polysilicon film resistors from two industrial BiCMOS 0.7 μm and BiCMOS 0.5 μm technologies, is performed on a test structure initially designed for resistor matching characterization, including a wide range of resistor area. After presentation of noise test bench results and related modeling, flicker noise properties are discussed for different polysilicon film thicknesses and doping levels. In conclusion, polysilicon resistance flicker noise depends strongly on these parameters
Keywords :
BiCMOS integrated circuits; electric noise measurement; elemental semiconductors; flicker noise; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; integrated circuit testing; resistors; silicon; 0.5 micron; 0.7 micron; LF noise characterization; Si; doping levels; film resistors; flicker noise characterization; flicker noise properties; low frequency noise; polysilicon film thicknesses; polysilicon resistors; submicron BiCMOS technologies; test structure; 1f noise; BiCMOS integrated circuits; Circuit noise; Doping; Noise figure; Noise level; Performance evaluation; Resistors; Semiconductor device noise; Testing;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589331
