Solid-state disconnects based on SiC power JFETs

Author

Alexandrov, P. ; Li, X. ; Fursin, L. ; Dries, C. ; Zhao, J. ; Burke, T.

Author_Institution

United Silicon Carbide, Inc., NJ, USA

fYear

2011

Firstpage

1

Lastpage

5

Abstract

This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be realized for high power applications. For application in 10kW power systems an insertion loss of less than 0.7% was achieved with a current fall time of 0.26μs for trip currents of about 70A. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

Keywords

electric resistance; junction gate field effect transistors; power field effect transistors; power systems; silicon compounds; wide band gap semiconductors; SiC; bidirectional SSD module; bidirectional solid state disconnect module; high power applications; insertion loss; on-resistance; power 10 kW; power JFET; power system; silicon carbide junction field effect transistor; trip currents; Insulated gate bipolar transistors; JFETs; Logic gates; MOSFET circuits; Silicon; Silicon carbide; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Vehicle Power and Propulsion Conference (VPPC), 2011 IEEE

Conference_Location

Chicago, IL

ISSN

Pending

Print_ISBN

978-1-61284-248-6

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/VPPC.2011.6043095

Filename

6043095