Power cycling test of power semiconductor based on junction temperature monitoring

Due to the TCE(thermal coefficient of expansion) mismatch, power semiconductor suffers from bonding crack and delamination due to large temperature swing. For verification of power semiconductor reliability, power cycling test is conducted. Junction temperature evaluation is most important factor which determines validity of the acceleration life test. In this paper, conceptual methodology how to evaluate the real-time junction temperature during the power cycling acceleration test was introduced. Junction temperature is evaluated by forward voltage drop measurement, and the junction temperature is real-time monitored during the power cycling test. Proposed real-time junction temperature monitoring technology was effective for the power cycling test control, and it is expected to be very effective for various applications.