Title :
A 10-Gb/s CMOS sample-and-hold phase detector using dual substrate technique
Author :
Hui, Zoe Wai Ying ; Kwasniewski, Tad A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carleton Univ., Ottawa, Ont., Canada
Abstract :
This paper presents the design of a full-rate CMOS phase detector for clock and data recovery applications in Synchronous Optical Network (SONET) OC-192 systems. Comparing the phase difference of a 10-GHz clock and a 10-Gb/s data signal severely challenges the speed capability of CMOS technology. As a result, phase detectors are traditionally designed in technologies with high power consumption such as GaAs or SiGe, or half-rate phase-locked loop structures which suffer from poor jitter performance and slow settling time are used. In this paper, a sample-and-hold phase detector for 10-Gb/s non return zero data implemented in a standard 0.18 μm CMOS technology is presented. A new dual-substrate technique is used to overcome the small rail-to-rail supply voltage headroom available for short channel length CMOS technology. The simulation and measurement results show that linear ranges with no dead zone on phase errors front -π/2 to π/2 are achieved. The core circuit dissipates a total power of 19.2 mW from a ±1.6 V supply.
Keywords :
CMOS integrated circuits; SONET; circuit simulation; integrated circuit design; integrated circuit measurement; integrated circuit modelling; optical receivers; phase detectors; phase locked loops; sample and hold circuits; synchronisation; 0.18 micron; 1.6 V; 10 GHz; 10 Gbit/s; 19.2 mW; CMOS sample-and-hold phase detector; CMOS speed capability; PLL; SONET; Synchronous Optical Network OC-192 systems; clock recovery applications; clock signal; core circuit power dissipation; data recovery applications; data signal; dual substrate technique; fidl-rate CMOS phase detector design; jitter performance; nonreturn zero data; phase difference; phase error dead zone-free linear ranges; phase-locked loop structures; power consumption; rail-to-rail supply voltage headroom; settling time; short channel length CMOS technology; simulation; CMOS technology; Clocks; Detectors; Energy consumption; Gallium arsenide; Germanium silicon alloys; Optical design; Phase detection; SONET; Silicon germanium;
Conference_Titel :
Electrical and Computer Engineering, 2004. Canadian Conference on
Print_ISBN :
0-7803-8253-6
DOI :
10.1109/CCECE.2004.1349756