Title :
Third-harmonic injection technique applied to a 5.87-to-7.56GHz 65nm CMOS Class-F oscillator with 192dBc/Hz FOM
Author :
Babaie, Masoud ; Staszewski, Robert Bogdan
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
The design of CMOS oscillators for the strict phase noise (PN) requirements of cellular standards, as well as low power consumption and thus high figure-of-merit (FoM), is very challenging. For example, in a GSM mobile station (MS), the PN requirement is -162dBc/Hz at 20MHz offset from a 915MHz carrier for a local oscillator (LO). On the other hand, LO power efficiency is a critical factor for a long-lasting battery life.
Keywords :
CMOS integrated circuits; cellular radio; harmonic analysis; oscillators; phase noise; power consumption; CMOS class-F oscillator; CMOS oscillator design; FoM; GSM mobile station; LO power efficiency; MS; PN requirement; cellular standard; figure-of-merit; frequency 20 MHz; frequency 5.87 GHz to 7.56 GHz; frequency 915 MHz; local oscillator; long-lasting battery life; power consumption; size 65 nm; strict phase noise; third-harmonic injection technique; CMOS integrated circuits; CMOS technology; Phase noise; Resonant frequency; Solid state circuits; Tuning;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487764
