Thermal transient measurement of insulated gate devices using the thermal properties of the channel resistance and parasitic elements

The paper discusses thermal transient measurements of advanced devices which operate in a temperature range where linearity cannot be assumed. However, finding a proper physical equation; valid on a wide temperature range for a device category; their calibration can be carried out at convenient temperatures. The validity of the technique can be verified by good fit of calibrated transients at different power. Some high frequency devices have only a single known stable operation point, the validity of the measurements can be verified by comparing transients of different length. In the paper measurements of a device on the R_DSON parameter and on reverse diode were compared. Thermal calibration of the R_DSON parameter of a FET gives a correct value for the μ_n electron mobility. A handy and accurate exponential formula for 1/ μ_n was suggested, gained from temperature calibration.