DocumentCode :
1707955
Title :
Effects of the Quality Factor of reactor on the TCSC characteristics and the Dual Impedance Solution Phenomenon
Author :
Sun, Hai-shun ; Cheng, Shijie ; Jiang, Lin ; Zhao, Jianguo ; Ma, Jia ; Wen, Jinyu
Author_Institution :
Dept. of Electr. Eng., Huazhong Univ. of Sci. & Technol., Wuhan
fYear :
2006
Firstpage :
1
Lastpage :
7
Abstract :
This paper investigates how the reactor´s quality factor (labeled as Q at power frequency) affects the characteristics of TCSC and what principle should be followed in designing an experimental TCSC setup. Since no close-form representation of the fundamental frequency impedance (EFFI) against the firing angle can be obtained considering the quality factor of the reactor, detailed electromagnetic transient simulation is employed for the investigation. Results show that, under the same firing condition, the EFFI of TCSC using reactor with low Q value may present considerable resistance component compared with that of the ideal case when Q is infinite. Moreover, it is found that the EFFI of the TCSC using a reactor with limited Q can be either inductive or capacitive for a specified firing angle when it is fired in a line current reference mode. This so-called dual impedance solution phenomenon is analyzed in detail in the paper.
Keywords :
Q-factor; electric impedance; power capacitors; reactors (electric); thyristor applications; TCSC characteristics; dual impedance solution phenomenon; effective fundamental frequency impedance; electromagnetic transient simulation; quality factor effects; thyristor controlled series capacitor; Frequency; Impedance; Inductors; PSCAD; Power capacitors; Power system stability; Power system transients; Prototypes; Q factor; Thyristors; Dual impedance solution; Effective fundamental frequency impedance (EFFI); Quality factor of reactor; Thyristor controlled series capacitor (TCSC);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power System Technology, 2006. PowerCon 2006. International Conference on
Conference_Location :
Chongqing
Print_ISBN :
1-4244-0110-0
Electronic_ISBN :
1-4244-0111-9
Type :
conf
DOI :
10.1109/ICPST.2006.321904
Filename :
4116225
Link To Document :
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