Title :
On optical gain mechanisms in a 2DEG photodetector
Author :
Nabet, Bahram ; Romero, Murilo A. ; Cola, Adriano ; Quaranta, Fabio ; Cesareo, Marina
Author_Institution :
Drexel Univ., Philadelphia, PA, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
Discusses the gain mechanisms in an optical detector based on a modulation doped heterojunction. It is shown that, in this gate-less HEMT device, varying the density of the mobile electron gas produces large differences in optical responsivity. The observed behavior is explained on the basis of a internal variation of the Fermi level, similar to a photovoltaic gating effect.
Keywords :
Fermi level; high electron mobility transistors; photodetectors; phototransistors; two-dimensional electron gas; 2DEG photodetector; Fermi level; gate-less HEMT device; mobile electron gas; modulation doped heterojunction; optical gain mechanisms; optical responsivity; photovoltaic gating effect; Electron mobility; Electron optics; Epitaxial layers; HEMTs; Heterojunctions; Optical detectors; Optical devices; Optical modulation; Photodetectors; Photovoltaic systems;
Conference_Titel :
Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7065-1
DOI :
10.1109/SBMOMO.2001.1008719
