Title :
Optical control on HEMT devices
Author :
Hwee Har Lim ; Alphones, A.
Author_Institution :
Centre for Wireless Commun., Nat. Univ. of Singapore, Singapore
Abstract :
Theoretical work for the DC characteristics of depletion mode Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMTs under optical illumination is presented. Both the photoconductive effect, which increases the 2-DEG channel electron concentration, and the photovoltaic effect in the gate junction are discussed. Analysis of the effect of optical control on the gain of a HEMT amplifier and the optical tuning of a HEMT oscillator are further described.
Keywords :
amplifiers; high electron mobility transistors; optical control; optical tuning; oscillators; photoconductivity; photovoltaic effects; 2-DEG channel electron concentration; Al/sub 0.3/Ga/sub 0.7/As-GaAs; DC characteristics; HEMT amplifier; HEMT devices; HEMT oscillator; III V semiconductors; depletion mode; gate junction; optical control; optical illumination; optical tuning; photoconductive effect; photovoltaic effect; Electron optics; Gallium arsenide; HEMTs; Lighting; Optical amplifiers; Optical control; Photoconductivity; Photovoltaic effects; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Antennas and Propagation Society International Symposium, 2001. IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7070-8
DOI :
10.1109/APS.2001.959775
